Tungsten and Other Refractory Metals for VLSI Applications
Suresh Sachdev TUNGSTEN INTERCONNECTS IN VLSI
the 18th 1986 International Conference on SOLID STATE DEVICES AND
MATERIALS Extended Abstracts K. Suguro High
Aspect Ratio Hole Filling with CVD Tungsten for Multi-level InterconnectionTungsten and Other Refractory Metals for VLSI Applications David W.
Woodruff ADHESION OF NON-SELECTIVE CVD TUNGSTEN TO
SILICON DIOXIDE
1986 International Electron Devices Meeting Technical Digest S.
Ogawa THERMALLY STABLE W/SILICIDE/Si CONTACT
a c
Suresh Sachdev and Sunil D.Mehta, TUNGSTEN INTERCONNECTS IN
VLSI ,Tungsten and Other Refractory Metals for VLSI Applications,1986,p.161-171K.Suguro et al., High Aspect Ratio Hole Filling with CVD Tungsten for Multi-levelInterconnection ,Extended Abstracts of the 18th 1986 International Conference on SOLID STATEDEVICES AND MATERIALS, ,p.503-506
2WF +3Si 2W+3SiF 1
2WF +3H 2W+6HF 2
WF +3/2SiH W+3/2SiF +H 3
WF +2SiH WSi +6HF+H 4
David W.Woodruff et al., ADHESION OF NON-SELECTIVE CVD TUNGSTEN
TO SILICON DIOXIDE ,Tungsten and Other Refractory Metals for VLSI Applications,MaterialsResearch Society ,1986,p.173-183
S.Ogawa et al., THERMALLY STABLE W/SILICIDE/Si CONTACT ,InternationalElectron Devices Meeting,1986 technical digest, ,p.62-65
18 16
a c
6 2 WF H
m
3 1 2
b selectively deposited CVD tungsten to
serve as a diffusion barrier or to refill contacts and vias for achieving improved stepcoverage of the aluminum deposited over it.
Encroachment of selective CVD tungsten has been a
major issue inhibiting its application in VLSI metallization. This encroachment candegrade the properties of the junction underneath the contact and cause increased leakage,defeating the purpose of using tungsten as a contact barrier.
selectively
deposited CVD tungsten selective CVD tungsten
blanket CVD tungsuten
BLANKET
TUNGSTEN
Tungsten and Other
Refractory Metals for VLSI Applications E.K. Broadbent A.E.Morgan
J.M.Deblasi P.Van der Putte A.Reader B.Coulman B.J.Burrow D.K.SadanaGROWTH OF SELECTIVE TUNGSTEN ON SELF-ALIGNED Ti AND PtNi
SILICIDES BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION
J.Vac.Sci.Technol.B5 6 Eliot K. Broadbent Nucleation and growth of
chemically vapor deposited tungsten on various subustrate materials:A review
11 a c
Tungsten and Other
Refractory Metals for VLSI Applications D.C.PAINE
MICROSTRUCTURAL CHARACTERIZATION OF LPCVD TUNGSTEN
INTERFACES
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